Press Release

November 15, 2018 SK Hynix Inc. Develops 1Ynm 8Gb DDR4 DRAM

SK Hynix Inc. Develops 1Ynm 8Gb DDR4 DRAM


Seoul, November 12, 2018 – SK Hynix Inc. (or ‘the Company’, announced that it has developed 1Ynm 8Gb (Gigabits) DDR4 (Double Data Rate 4) DRAM. The productivity of this product is increased by 20% and the power consumption reduced by more than 15%, compared to the previous generation, 1Xnm DRAM. It also supports a data transfer rate of up to 3,200Mbps, which is the fastest data processing speed in DDR4 interface.

The Company adopted a ‘4-Phase Clocking’ scheme, which doubles the clock signal to boost data transfer speed and stability.

SK Hynix also introduced its own ‘Sense Amp. Control’ technology to reduce power consumption and data errors. With this technology, the Company successfully enhanced the performance of the sense amplifier. SK Hynix improved the transistor structure to lower the possibility of data errors, a challenge that accompanies technology shrink. The Company also added a low-power power supply to the circuit to prevent unnecessary power consumption.

“This 1Ynm 8Gb DDR4 DRAM has optimum performance and density for our clients,” said vice president Sean Kim, the Head of DRAM Marketing. “SK Hynix plans to start shipping from the first quarter of the next year to actively respond to market demand,” he added.

SK Hynix plans to expand the 1Ynm technology process to Server and PC segments, and later to other various applications such as mobile devices.

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